How does SiC MOSFET recycling differ from conventional silicon-based IGBT recycling?

The per-unit residual value of a SiC MOSFET is 3-8 times that of a silicon-based IGBT with the same ratings. The SiC substrate itself is valuable (a 6-inch SiC substrate sells for roughly CNY 800-1,500 per wafer), and SiC devices are used mainly in 800V high-voltage platforms with highly modularized packaging — so recycling must distinguish three levels: bare dies, modules and substrates. Conventional IGBTs are a volume business; SiC is a high-value, premium-priced niche.

Is GaN device recycling worth anything?

GaN devices have low unit prices (CNY 5-15 per piece), so per-unit recycling value is limited. But GaN fast chargers and 5G base-station RF front ends use enormous quantities, making bulk recycling commercially viable. RF GaN devices on GaN-on-SiC substrates are far more valuable thanks to the SiC substrate — per-module recycling prices can reach CNY 200-500, an order of magnitude above consumer-grade GaN HEMTs.

Which brands of SiC devices command the highest recycling prices?

Wolfspeed C3M series (1200V) tops the market at CNY 80-120 per piece; Infineon CoolSiC IMZA series runs CNY 60-90; STMicroelectronics STW series CNY 50-80. Automotive-grade SiC modules (such as the main-drive modules from BYD's e-Platform 3.0) recycle at CNY 200-400 per complete module. Chinese-made SiC (Sanan, TanKeBlue) recycles slightly lower per piece but volumes are growing.

SiC/GaN Third-Generation Semiconductor Recycling: In-Depth Residual Value Analysis of Silicon Carbide MOSFETs and GaN Devices

Third-Generation Semiconductors: the Next Value Frontier in Chip Recycling

If first-generation silicon-based recycling is a volume game, then third-generation semiconductors — SiC (silicon carbide) and GaN (gallium nitride) — run on a "high unit price, high entry barrier, high growth" premium model. In 2026, the spread of 800V EV platforms, the standardization of PD3.1 fast charging, and 5G macro-site refresh cycles are driving rapid growth in SiC/GaN device retirements, with residual values far above conventional silicon power devices.

SiC MOSFET: the "Golden Device" of 800V Platforms

Compared with silicon-based IGBTs, SiC MOSFETs cut switching losses by 70% and triple the voltage withstand rating — the core device of 800V high-voltage platforms. Models such as the BYD e-Platform 3.0, Zeekr 001 and Li Auto MEGA all use SiC-based main-drive inverters. Current reference recycling prices for mainstream SiC MOSFETs (Reference Price (CNY)):

Part Number	Specification	Manufacturer	Reference Price (CNY) per piece
C3M0030090K	900V/23A, TO-247	Wolfspeed	¥80-120
C3M0120090K	900V/45A, TO-247	Wolfspeed	¥100-150
IMZA120R030M1	1200V/30mΩ, TO-247	Infineon CoolSiC	¥60-90
IMBG120R030M1	1200V/30mΩ, D2PAK	Infineon CoolSiC	¥55-85
STW45N120	1200V/45A, HiP247	STMicroelectronics	¥50-80
SCT30N120	1200V/30A, H2PAK	STMicroelectronics	¥45-70
BD45H120	1200V/45A, TO-247	BYD Semiconductor	¥40-65
LSIC1MO120E0080	1200V/80A, TO-247	ROHM Semiconductor	¥55-85

As the table shows, the per-unit recycling price of a SiC MOSFET is 3-8 times that of a silicon-based IGBT with the same ratings (roughly CNY 10-20). The Wolfspeed C3M series commands the highest premium thanks to the strongest market demand and scarce spare-part channels.

Automotive-Grade SiC Modules: the "Hard Currency" of Whole-Module Recycling

Beyond discrete devices, automotive-grade SiC power modules are where the real recycling value lies. The SiC modules used in EV main-drive inverters are highly integrated packages, and whole-module recycling is far more efficient than desoldering piece by piece:

Application	Module Type / Source	SiC Die Count	Reference Price (CNY) per module
800V main-drive inverter	BYD e-Platform 3.0	6-8 dies	¥200-400
800V main-drive inverter	Zeekr/Geely platforms	6 dies	¥250-400
On-board charger (OBC)	22kW SiC solution	4 dies	¥80-150
DC-DC converter	500W SiC solution	2-4 dies	¥40-80
Charging-pile module	30kW SiC charging module	8-12 dies	¥150-300

Supply of automotive SiC modules comes mainly from teardowns of accident-damaged vehicles and production-line rejects. After a total-loss accident, OBC and inverter modules often remain intact — the largest supply source for SiC module recycling. Auto-parts hubs in Shenzhen and Dongguan have already formed a grey-market chain around accident-car SiC modules, but it lacks proper data wiping and quality certification, carrying refurbishment risk.

GaN: the Low-Price, High-Volume Workhorse

GaN device unit prices are far below SiC, but usage volumes are enormous — bulk recycling still holds commercial value. Current reference recycling prices for GaN devices (Reference Price (CNY)):

Part Number	Application	Manufacturer	Reference Price (CNY) per piece
NV6135/NV6127	65-100W fast charging	Navitas	¥5-15
TPN1300	140W fast charging	Innoscience	¥8-18
EPC2032/EPC2059	48V DC-DC	EPC	¥3-10
TP65H300G4LSG	5G base-station PA	Transphorm	¥15-30
RF GaN HEMT	5G macro-site RF	Qorvo/MACOM	¥50-100

GaN recycling splits into two tracks: consumer-grade GaN is a volume play (fast chargers, small appliances, CNY 5-15 per piece, won on volume), while RF-grade GaN is a premium play (5G base-station PAs, radar, CNY 50-100 per piece, won on unit price). RF-grade GaN-on-SiC devices command 5-10 times the recycling price of consumer GaN thanks to the valuable SiC substrate.

SiC Substrate Recovery: the Overlooked "Hidden Gold Mine"

The biggest hidden value in SiC device recycling lies in the substrate. The SiC single-crystal substrate accounts for 40%-50% of total device cost — a 6-inch SiC substrate sells for roughly CNY 800-1,500 per wafer, and an 8-inch wafer CNY 1,500-3,000. Substrates from retired SiC devices cannot be reused directly, but after surface repair and CMP polishing they can serve downgraded applications or R&D testing:

6-inch SiC substrate recovery: Repaired retired substrates sell for CNY 300-600 per wafer, used for device R&D testing and downgraded products.
8-inch SiC substrate recovery: With 8-inch capacity scarce, repaired retired substrates command even higher premiums — CNY 800-1,500 per wafer.
GaN-on-SiC substrates: The SiC substrates under retired 5G base-station GaN devices stand out, recycling at CNY 200-500 per wafer.
Substrate repair services: In China, only a few vendors such as Sanan and TanKeBlue have substrate repair capability — supply is scarce.

The Chinese SiC/GaN Recycling Ecosystem

China's third-generation semiconductor supply chain is rising fast, and Chinese-made devices are taking a growing share of the recycling market:

Sanan Optoelectronics: Full SiC chain (substrate-epitaxy-device); its 6-inch SiC MOSFET SICW series recycles at CNY 35-55 per piece.
TanKeBlue: Leading SiC substrate maker, positioned in both substrate repair and device recycling.
Innoscience: The world's largest 8-inch GaN wafer foundry; GaN devices recycle at CNY 8-18 per piece.
BYD Semiconductor: Self-supplies automotive SiC modules; retired modules recycle at CNY 180-350.
Silan Microelectronics / CR Micro: IDM-model SiC devices; recycling volumes growing with shipments.

By 2027, Chinese-made SiC devices are expected to rise from roughly 15% today to over 30% of the recycling market. Recyclers should build part-number identification and testing capabilities for Chinese SiC/GaN devices in advance.

Third-Generation Semiconductors vs. Conventional Power Devices: Value Comparison

Category	Per-Unit Residual Value	Technical Barrier	2026 Supply	Margin
SiC MOSFET (1200V)	CNY 50-150	Medium (dynamic testing)	Growing	30%-45%
SiC power module (automotive)	CNY 200-400	Low (module-level)	Rapid volume ramp	35%-50%
GaN fast-charging devices	CNY 5-18	Low	Very large	15%-25%
GaN RF devices	CNY 50-100	Medium (RF testing)	Moderate	25%-40%
Silicon IGBT (1200V)	CNY 10-20	Low	Very large	10%-20%
Silicon MOSFET	CNY 2-8	Low	Very large	8%-15%

SiC volumes may trail silicon, but per-unit profit margins are 2-3 times higher — a classic high-added-value recycling category.

Advice for Recyclers and Asset Disposers

Recyclers: Prioritize module-level SiC recycling and automotive-grade testing capability — profit of CNY 80-200 per complete module far beats piece-by-piece desoldering. Building SiC dynamic testing (double-pulse testing) lifts quote accuracy above 90%.
EV makers / charging-pile operators: Retired SiC modules carry substantial residual value — don't scrap faulty modules replaced during service. Keep a retirement ledger for SiC devices; batch volumes give stronger negotiating power.
Watch substrate recovery: Partner with substrate makers such as Sanan/TanKeBlue — repaired substrates from retired SiC devices still retain 30%-50% of their value.
Beware refurbished parts: Performance degradation in refurbished SiC devices is invisible to the naked eye. Proper recycling should provide dynamic test reports and batch traceability.

ChipReclaim has established professional recycling and dynamic-testing capabilities for SiC/GaN third-generation semiconductors, covering all mainstream part numbers from Wolfspeed, Infineon, STMicroelectronics, Sanan and BYD. For EV makers, charging-pile operators and power-module asset disposers, we offer free assessments and top-market buyback prices — maximizing the residual value of your third-generation semiconductor devices.